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Currently, phase-change chalcogenide materials, whose optical and electrical properties significantly change during phase transformations between amorphous and crystalline states, are successfully used to produce non-volatile electrical and optical memory as well as various tunable photonic devices. The principle of amorphization for these chalcogenide materials is based on the melting process. Determining the parameters of the phase transition between crystal and molten states and understanding all the related processes is critical to further increasing the number of operating cycles and optimizing the parameters of the devices being created, including their energy consumption. In this work, the results of the development, creation and launch of a hardware-software complex designed for measuring electrical resistance of chalcogenide materials during the heating process is presented. The developed complex allows measuring the temperature dependencies of the electrical resistance of various chalcogenide semiconductors, including their molten state. The complex can carry out the measurements both in air and in inert atmospheres, starting from room temperature up to 800 °C. The selenium and tellurium bulk materials were investigated to prove the operability of the complex. The test results were compared with the literature data and the results of differential scanning calorimetry and have shown high reproducibility.

Key words: phase-change materials, chalcogenide semiconductors, phase-change memory, melting process, melting temperature, electrical properties, hardware-software complex
Published in: Technological processes and routes
Bibliography link: Lazarenko P. I. Measuring complex for studying temperature dependence of the electrical resistance of chalcogenide materials in the solid and molten states. Proc. Univ. Electronics, 2024, vol. 29, no. 2, pp. 158–167. https://doi.org/10.24151/1561-5405-2024-29-2-158-167
Financial source: The work has been supported by the Russian Science Foundation (project no. 20-79-10322, https://rscf.ru/project/20-79-10322/) in using Core facilities center “MEMS and electronic components”. Acknowledgments: the author expresses gratitude to Babich A. V., Veretennikov V. V. and Morozov I. S. for technical assistance in measurements.

Peter I. Lazarenko
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

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UDK: 546.22/.24
Publication type: Scientific article
DOI: 10.24151/1561-5405-2024-29-2-158-167
RISC id: NVNAQJ

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